advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -30v lower on-resistance r ds(on) 20m fast switching characteristic i d -40a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.8 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 200812192 maximum thermal resistance, junction-ambient (pcb mount) 3 1 AP4435GH/j rating rohs-compliant product 44.6 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v -30 + 20 -40 0.36 continuous drain current, v gs @ 10v -25 pulsed drain current 1 -150 parameter total power dissipation operating junction temperature range storage temperature range -55 to 150 linear derating factor thermal data g d s g d s to-252(h) g d s to-251(j) the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap4435gj) is available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =-1ma - -0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-26a - - 20 m ? v gs =-4.5v, i d =-16a - - 36 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-26a - 31 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =150 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v - - + 100 na q g total gate charge 2 i d =-26a - 16.5 32 nc q gs gate-source charge v ds =-25v - 2.7 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 11 - nc t d(on) turn-on delay time 2 v ds =-15v - 7.5 - ns t r rise time i d =-26a - 64 - ns t d(off) turn-off delay time r g =3.3 ? v gs =-10v - 24 - ns t f fall time r d =0.58 -92- ns c iss input capacitance v gs =0v - 1160 1970 pf c oss output capacitance v ds =-25v - 195 - pf c rss reverse transfer capacitance f=1.0mhz - 175 - pf r g gate resistance f=1.0mhz - 5 17 ? symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-26a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-10a, v gs =0 v , - 25 - ns q rr reverse recovery charge di/dt=100a/s - 15 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board 2 AP4435GH/j
AP4435GH/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature ??????? fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -6.0v -5.0v v g =-4.0v 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = - 26 a v g =-10v 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0.0 6.5 13.0 19.5 26.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 20 40 60 80 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -6.0v -5.0v v g =-4.0v 14 18 22 26 30 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = - 16 a t c =25 :
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP4435GH/j q v g -4.5v q gs q gd q g charge 0 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -26 a v ds = -25 v 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 laser marking symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 4435gh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement for low voltage mosfet only e3 5
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 meet rohs requirement for low voltage mosfet only
|
